2N759A
- Mfr.Part #
- 2N759A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 48,635
- In Stock :
- 48,635
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 500 mW
- Terminal Form :
- Wire
- Subcategory :
- Transistors
- Collector-Emitter Voltage-Max :
- 60 V
- Max Collector Current :
- 100 mA
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- JEDEC-95 Code :
- TO-18
- Power - Max :
- 500 mW
- Product Type :
- BJTs - Bipolar Transistors
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Package Shape :
- Round
- RoHS :
- Compliant
- Collector Current-Max (IC) :
- 0.1 A
- Package :
- Bulk
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Series :
- -
- Reach Compliance Code :
- Unknown
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 60 V
- Product Category :
- Bipolar Transistors - BJT
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Number of Terminals :
- 3
- Current - Collector (Ic) (Max) :
- 100 mA
- Packaging :
- Bulk
- Frequency - Transition :
- -
- Number of Elements :
- 1
- Supplier Device Package :
- TO-18 (TO-206AA)
- Brand :
- Microchip Technology
- JESD-609 Code :
- e0
- Configuration :
- Single
- Transistor Type :
- NPN
- Surface Mount :
- No
- Technology :
- Si
- Manufacturer :
- Microchip
- JESD-30 Code :
- O-MBCY-W3
- Transistor Polarity :
- NPN
- Operating Temperature :
- -
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- -
- Qualification Status :
- Not Qualified
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- No
- Terminal Finish :
- TIN LEAD
- Pin Count :
- 3
- Number of Pins :
- 3
- HTS Code :
- 8541.21.00.95
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Product Status :
- Active
- DC Current Gain-Min (hFE) :
- 18
- Vce Saturation (Max) @ Ib, Ic :
- -
- Datasheets
- 2N759A
NPN - - 1 Elements SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N759A Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is -.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is -.The product comes in the supplier device package of TO-18 (TO-206AA).There is a setting of 60 V for maximal collector-Emitter voltage.A 60 V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 100 mA volts at its maximum.
2N759A Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-18 (TO-206AA)
2N759A Applications
There are a lot of Microchip Technology
2N759A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| 2N757A | Microchip Technology | 7,636 | SMALL-SIGNAL BJT |
















