2N7227

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

Single

Rds On (Max) @ Id, Vgs :

315m Ω @ 9A, 10V

Qualification Status :

Qualified

Number of Terminations :

3

Mounting Type :

Through Hole

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Pin Count :

3

Contact Plating :

Lead, Tin

Case Connection :

Isolated

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

4W Ta 150W Tc

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

400V

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

56A

Terminal Finish :

Tin/Lead (Sn/Pb)

Package / Case :

TO-254-3, TO-254AA (Straight Leads)

Terminal Form :

PIN/PEG

Packaging :

Bulk

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e0

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

700 mJ

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

400V

Continuous Drain Current (ID) :

14A

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reference Standard :

MIL

Published :

1997

Mount :

Through Hole