2N7224

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Power Dissipation-Max :

4W Ta 150W Tc

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Case Connection :

Isolated

FET Type :

N-Channel

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.081Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

High Reliability

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Published :

1997

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.29.00.95

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

34A

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

70m Ω @ 21A, 10V

JESD-609 Code :

e4

Terminal Form :

PIN/PEG

Mount :

Through Hole

Mounting Type :

Through Hole

Package / Case :

TO-254-3, TO-254AA (Straight Leads)

Terminal Position :

Single

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

100V

Contact Plating :

Lead, Tin

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

Gold (Au) - with Nickel (Ni) barrier