2N6989
- Mfr.Part #
- 2N6989
- Manufacturer
- Microchip Technology
- Package / Case
- 14-DIP (0.300, 7.62mm)
- Datasheet
- Download
- Description
- TRANS 4NPN 50V 0.8A TO116
- Stock
- 4,702
- In Stock :
- 4,702
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- ECCN Code :
- EAR99
- Factory Lead Time :
- 22 Weeks
- Max Power Dissipation :
- 1.5W
- Polarity :
- NPN
- Configuration :
- Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Mounting Type :
- Through Hole
- Max Collector Current :
- 800mA
- Collector Emitter Voltage (VCEO) :
- 50V
- JESD-609 Code :
- e0
- Power Dissipation :
- 1.5W
- Package / Case :
- 14-DIP (0.300, 7.62mm)
- Number of Terminations :
- 14
- Number of Elements :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Packaging :
- Bulk
- Operating Temperature :
- -65°C~200°C TJ
- Number of Pins :
- 14
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Collector Base Voltage (VCBO) :
- 75V
- Mount :
- Through Hole
- Transistor Type :
- 4 NPN (Quad)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- Dual
- Pbfree Code :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- 6V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Contact Plating :
- Lead, Tin
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- JEDEC-95 Code :
- TO-116
- Published :
- 2007
- Collector Emitter Breakdown Voltage :
- 50V
- Datasheets
- 2N6989
2N6989 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Microsemi Corporation stock available at
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