2N6667
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- Mfr.Part #
- 2N6667
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 10A TO220
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 2V
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1mA
- Collector Base Voltage (VCBO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 3V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Operating Temperature :
- -65°C~150°C TJ
- Base Part Number :
- 2N6667
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Continuous Collector Current :
- 10A
- Weight :
- 6.000006g
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 2W
- Current Rating :
- -10A
- Height :
- 15.75mm
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JEDEC-95 Code :
- TO-220AB
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Published :
- 2007
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP - Darlington
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- JESD-609 Code :
- e3
- Max Collector Current :
- 10A
- Collector Emitter Voltage (VCEO) :
- 60V
- Polarity :
- PNP
- Radiation Hardening :
- No
- Max Power Dissipation :
- 2W
- Length :
- 10.53mm
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 4.83mm
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- -60V
- hFE Min :
- 1000
- Pin Count :
- 3
- Factory Lead Time :
- 2 Weeks
- Datasheets
- 2N6667
2N6667 Documents
PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
2N6667G Overview
This device has a DC current gain of 1000 @ 5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 3V @ 100mA, 10A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 10A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 10A volts is possible.
2N6667G Features
the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
2N6667G Applications
There are a lot of ON Semiconductor
2N6667G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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