2N6667
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- Mfr.Part #
- 2N6667
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 10A TO220
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- -10A
- Radiation Hardening :
- No
- Published :
- 2007
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Factory Lead Time :
- 2 Weeks
- Collector Base Voltage (VCBO) :
- 60V
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Collector Emitter Breakdown Voltage :
- 60V
- Power Dissipation :
- 2W
- Package / Case :
- TO-220-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 3V
- Voltage - Rated DC :
- -60V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP - Darlington
- Max Power Dissipation :
- 2W
- Max Collector Current :
- 10A
- Collector Emitter Voltage (VCEO) :
- 60V
- hFE Min :
- 1000
- Element Configuration :
- Single
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- Continuous Collector Current :
- 10A
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 1mA
- Weight :
- 6.000006g
- Width :
- 4.83mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Collector Emitter Saturation Voltage :
- 2V
- Base Part Number :
- 2N6667
- Number of Terminations :
- 3
- Height :
- 15.75mm
- Length :
- 10.53mm
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity :
- PNP
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Datasheets
- 2N6667
PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
2N6667G Overview
This device has a DC current gain of 1000 @ 5A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 3V @ 100mA, 10A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 10A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 10A volts is possible.
2N6667G Features
the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
2N6667G Applications
There are a lot of ON Semiconductor
2N6667G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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