2N657S
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- Mfr.Part #
- 2N657S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 8,650
- In Stock ：
- 8,650
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Manufacturer :
- Microchip
- Subcategory :
- Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Power - Max :
- 600 mW
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 40 V
- Product Type :
- BJTs - Bipolar Transistors
- Product Category :
- Bipolar Transistors - BJT
- Frequency - Transition :
- -
- Brand :
- Microchip Technology
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 15mA, 150mA
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Product Status :
- Active
- Series :
- -
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Reach Compliance Code :
- Unknown
- Supplier Device Package :
- TO-5AA
- Package :
- Bulk
- Datasheets
- 2N657S
NPN -65°C ~ 200°C (TJ) 10μA (ICBO) TO-205AA, TO-5-3 Metal Can Through Hole
2N657S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA, 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 15mA, 150mA.The product comes in the supplier device package of TO-5AA.A 40 V maximal voltage - Collector Emitter Breakdown is present in the device.
2N657S Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the supplier device package of TO-5AA
2N657S Applications
There are a lot of Microchip Technology
2N657S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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