2N656S
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- Mfr.Part #
- 2N656S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 3,569
- In Stock ：
- 3,569
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Manufacturer :
- Microchip
- Vce Saturation (Max) @ Ib, Ic :
- -
- Current - Collector (Ic) (Max) :
- 12 A
- Subcategory :
- Transistors
- Transistor Type :
- NPN
- Product Category :
- Bipolar Transistors - BJT
- Product Status :
- Active
- Package :
- Bulk
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Frequency - Transition :
- -
- Brand :
- Microchip Technology
- Product Type :
- BJTs - Bipolar Transistors
- Series :
- -
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Supplier Device Package :
- TO-5AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Current - Collector Cutoff (Max) :
- -
- Datasheets
- 2N656S
NPN -65°C ~ 200°C (TJ) - TO-205AA, TO-5-3 Metal Can Through Hole
2N656S Overview
In this device, the DC current gain is -, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to -.Product comes in the supplier's device package TO-5AA.There is a 60 V maximal voltage in the device due to collector-emitter breakdown.
2N656S Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-5AA
2N656S Applications
There are a lot of Microchip Technology
2N656S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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