2N6547
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- Mfr.Part #
- 2N6547
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- PNP TRANSISTOR
- Stock
- 28,707
- In Stock ：
- 28,707
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 9V
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 850V
- Voltage - Rated DC :
- 850V
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Mounting Type :
- Chassis Mount
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- PIN/PEG
- Base Part Number :
- 2N65
- Max Collector Current :
- 15A
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 400V
- Current Rating :
- 15A
- Height :
- 26mm
- Frequency :
- 3MHz
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Gain Bandwidth Product :
- 24MHz
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Width :
- 8.92mm
- Max Power Dissipation :
- 175W
- Mount :
- Chassis Mount, Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 3A, 15A
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 1.5V
- hFE Min :
- 6
- Length :
- 39.3mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 5A 2V
- Collector Emitter Voltage (VCEO) :
- 400V
- Transition Frequency :
- 6MHz
- Weight :
- 4.535924g
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Package / Case :
- TO-204AA, TO-3
- Power Dissipation :
- 175W
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1mA
- Lead Free :
- Lead Free
- Number of Pins :
- 2
- Packaging :
- Tube
- Operating Temperature :
- 200°C TJ
- Datasheets
- 2N6547
NPN 200°C TJ 1mA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tube Chassis Mount
2N6547 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 12 @ 5A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 5V @ 3A, 15A.The emitter base voltage can be kept at 9V for high efficiency.The current rating of this fuse is 15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 6MHz.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
2N6547 Features
the DC current gain for this device is 12 @ 5A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 5V @ 3A, 15A
the emitter base voltage is kept at 9V
the current rating of this device is 15A
a transition frequency of 6MHz
2N6547 Applications
There are a lot of STMicroelectronics
2N6547 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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