2N6520TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Weight :

240mg

Width :

3.86mm

Contact Plating :

Tin

Collector Base Voltage (VCBO) :

-350V

Transistor Type :

PNP

Emitter Base Voltage (VEBO) :

-5V

Number of Pins :

3

Polarity/Channel Type :

PNP

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Frequency :

200MHz

Transition Frequency :

40MHz

Pbfree Code :

yes

Current Rating :

-500mA

RoHS Status :

ROHS3 Compliant

Power Dissipation :

625mW

Max Breakdown Voltage :

350V

Operating Temperature :

150°C TJ

REACH SVHC :

No SVHC

Mount :

Through Hole

Voltage - Rated DC :

-350V

Collector Emitter Voltage (VCEO) :

350V

Length :

4.58mm

Turn On Time-Max (ton) :

200ns

Radiation Hardening :

No

Published :

2007

Base Part Number :

2N6520

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

200MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

JESD-609 Code :

e3

Terminal Position :

BOTTOM

Transistor Element Material :

SILICON

Element Configuration :

Single

Lead Free :

Lead Free

Packaging :

Tape and Box (TB)

Collector Emitter Saturation Voltage :

-1V

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

350V

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Height :

4.58mm

Max Collector Current :

500mA

Factory Lead Time :

6 Weeks

Current - Collector Cutoff (Max) :

50nA ICBO

Max Power Dissipation :

625mW

hFE Min :

30

ECCN Code :

EAR99