2N6520TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

hFE Min :

30

Collector Emitter Voltage (VCEO) :

350V

Mount :

Through Hole

Emitter Base Voltage (VEBO) :

-5V

Weight :

240mg

Frequency :

200MHz

Power Dissipation :

625mW

Number of Pins :

3

Mounting Type :

Through Hole

Base Part Number :

2N6520

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Collector Base Voltage (VCBO) :

-350V

Max Breakdown Voltage :

350V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-500mA

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

50nA ICBO

Gain Bandwidth Product :

200MHz

Max Power Dissipation :

625mW

ECCN Code :

EAR99

Number of Terminations :

3

Voltage - Rated DC :

-350V

Factory Lead Time :

6 Weeks

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number of Elements :

1

Transistor Type :

PNP

REACH SVHC :

No SVHC

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

Transition Frequency :

40MHz

Operating Temperature :

150°C TJ

Polarity/Channel Type :

PNP

Element Configuration :

Single

Packaging :

Tape and Box (TB)

Width :

3.86mm

Collector Emitter Breakdown Voltage :

350V

Length :

4.58mm

Turn On Time-Max (ton) :

200ns

Pbfree Code :

yes

Max Collector Current :

500mA

Collector Emitter Saturation Voltage :

-1V

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Radiation Hardening :

No

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Height :

4.58mm

Published :

2007