2N6520RLRA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Collector Emitter Saturation Voltage :

1V

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

350V

Terminal Finish :

Tin/Lead (Sn/Pb)

Current - Collector Cutoff (Max) :

50nA ICBO

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

350V

Power - Max :

625mW

Transistor Element Material :

SILICON

Published :

2004

hFE Min :

20

Emitter Base Voltage (VEBO) :

5V

Current Rating :

-500mA

Polarity/Channel Type :

PNP

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Base Part Number :

2N6520

Peak Reflow Temperature (Cel) :

240

Element Configuration :

Single

Terminal Position :

BOTTOM

Pbfree Code :

No

Max Power Dissipation :

625mW

Transistor Type :

PNP

Number of Pins :

3

RoHS Status :

Non-RoHS Compliant

Voltage - Rated DC :

-350V

HTS Code :

8541.21.00.95

Mounting Type :

Through Hole

JESD-609 Code :

e0

Collector Emitter Voltage (VCEO) :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

350V

Lead Free :

Contains Lead

Max Collector Current :

500mA

Number of Terminations :

3

Number of Elements :

1

Reach Compliance Code :

not_compliant

Surface Mount :

No

Gain Bandwidth Product :

200MHz

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Transition Frequency :

40MHz

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)