2N6520RLRA

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Mfr.Part #
2N6520RLRA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS PNP 350V 0.5A TO92
Stock
3,194
In Stock :
3,194

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Surface Mount :
No
Pbfree Code :
No
Pin Count :
3
Power - Max :
625mW
Collector Emitter Breakdown Voltage :
350V
Transistor Type :
PNP
Current - Collector Cutoff (Max) :
50nA ICBO
Peak Reflow Temperature (Cel) :
240
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Packaging :
Tape and Reel (TR)
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Terminations :
3
Base Part Number :
2N6520
Vce Saturation (Max) @ Ib, Ic :
1V @ 5mA, 50mA
Polarity/Channel Type :
PNP
Max Collector Current :
500mA
Lead Free :
Contains Lead
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
hFE Min :
20
Current Rating :
-500mA
Emitter Base Voltage (VEBO) :
5V
Element Configuration :
Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 50mA 10V
JESD-609 Code :
e0
Transition Frequency :
40MHz
Terminal Position :
BOTTOM
Gain Bandwidth Product :
200MHz
Terminal Finish :
Tin/Lead (Sn/Pb)
Max Power Dissipation :
625mW
Number of Elements :
1
Number of Pins :
3
Qualification Status :
Not Qualified
Max Breakdown Voltage :
350V
RoHS Status :
Non-RoHS Compliant
Collector Base Voltage (VCBO) :
350V
Mounting Type :
Through Hole
ECCN Code :
EAR99
Reach Compliance Code :
not_compliant
Collector Emitter Voltage (VCEO) :
1V
HTS Code :
8541.21.00.95
Time@Peak Reflow Temperature-Max (s) :
30
Published :
2004
Voltage - Rated DC :
-350V
Transistor Application :
SWITCHING
Collector Emitter Saturation Voltage :
1V
Datasheets
2N6520RLRA
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N6520RLRA from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Number of Terminations:3, Base Part Number:2N6520, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, 2N6520RLRA pinout, 2N6520RLRA datasheet PDF, 2N6520RLRA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N6520RLRA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N6520RLRA


PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

2N6520RLRA Overview


In this device, the DC current gain is 20 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 5mA, 50mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).40MHz is present in the transition frequency.An input voltage of 350V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.

2N6520RLRA Features


the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 40MHz


2N6520RLRA Applications


There are a lot of ON Semiconductor
2N6520RLRA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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