2N6519BU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

300V

Transistor Type :

PNP

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

45

Voltage - Rated DC :

-300V

Gain Bandwidth Product :

200MHz

Current - Collector Cutoff (Max) :

50nA ICBO

RoHS Status :

RoHS Compliant

Collector Base Voltage (VCBO) :

300V

Collector Emitter Voltage (VCEO) :

300V

Lead Free :

Lead Free

Element Configuration :

Single

Max Power Dissipation :

625mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 50mA 10V

Frequency :

200MHz

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Power Dissipation :

625W

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Through Hole

Power - Max :

625mW

Number of Pins :

3

Number of Elements :

1

Mount :

Through Hole

Base Part Number :

2N6519

Max Collector Current :

500mA

Current Rating :

-500mA