2N6518TA
- Mfr.Part #
- 2N6518TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 250V 0.5A TO92-3
- Stock
- 8,649
- In Stock :
- 8,649
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- COMMERCIAL
- Terminal Finish :
- MATTE TIN
- Transition Frequency :
- 40MHz
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Turn On Time-Max (ton) :
- 200ns
- Reach Compliance Code :
- Unknown
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 50mA 10V
- Transistor Type :
- PNP
- Turn Off Time-Max (toff) :
- 3.5ns
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Terminal Position :
- BOTTOM
- Power - Max :
- 625mW
- Pbfree Code :
- yes
- Frequency - Transition :
- 200MHz
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Box (TB)
- Surface Mount :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector (Ic) (Max) :
- 500mA
- JESD-30 Code :
- O-PBCY-T3
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 250V
- Number of Elements :
- 1
- Configuration :
- Single
- Datasheets
- 2N6518TA

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N6518TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 45 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 5mA, 50mA.Parts of this part have transition frequencies of 40MHz.This device displays a 250V maximum voltage - Collector Emitter Breakdown.
2N6518TA Features
the DC current gain for this device is 45 @ 50mA 10V
the vce saturation(Max) is 1V @ 5mA, 50mA
a transition frequency of 40MHz
2N6518TA Applications
There are a lot of Rochester Electronics, LLC
2N6518TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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