2N6517TA
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- Mfr.Part #
- 2N6517TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A TO92-3
- Stock
- 33,021
- In Stock ：
- 33,021
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Transition Frequency :
- 40MHz
- Width :
- 3.86mm
- JESD-609 Code :
- e3
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 500mA
- Weight :
- 240mg
- Height :
- 4.58mm
- Power Dissipation :
- 625mW
- Pbfree Code :
- yes
- Factory Lead Time :
- 6 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Terminations :
- 3
- Base Part Number :
- 2N6517
- Emitter Base Voltage (VEBO) :
- 6V
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Length :
- 4.58mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 625mW
- Collector Emitter Breakdown Voltage :
- 350V
- Published :
- 2007
- Number of Elements :
- 1
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1V
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 350V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Transistor Type :
- NPN
- hFE Min :
- 30
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 350V
- Frequency :
- 200MHz
- Collector Base Voltage (VCBO) :
- 350V
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- 350V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Gain Bandwidth Product :
- 200MHz
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Box (TB)
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Current Rating :
- 500mA
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Mount :
- Through Hole
- Datasheets
- 2N6517TA
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N6517TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 50mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.Single BJT transistor can take a breakdown input voltage of 350V volts.During maximum operation, collector current can be as low as 500mA volts.
2N6517TA Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
2N6517TA Applications
There are a lot of ON Semiconductor
2N6517TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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