2N6517TA
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- Mfr.Part #
- 2N6517TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A TO92-3
- Stock
- 33,021
- In Stock ：
- 33,021
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- BOTTOM
- Published :
- 2007
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time :
- 6 Weeks
- Max Power Dissipation :
- 625mW
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Voltage - Rated DC :
- 350V
- Length :
- 4.58mm
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 350V
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Box (TB)
- Number of Elements :
- 1
- Max Collector Current :
- 500mA
- Transition Frequency :
- 40MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Weight :
- 240mg
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Power Dissipation :
- 625mW
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Frequency :
- 200MHz
- Mounting Type :
- Through Hole
- Base Part Number :
- 2N6517
- JESD-609 Code :
- e3
- Height :
- 4.58mm
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 200MHz
- Width :
- 3.86mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 500mA
- Number of Terminations :
- 3
- hFE Min :
- 30
- Collector Base Voltage (VCBO) :
- 350V
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 1V
- Collector Emitter Breakdown Voltage :
- 350V
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 350V
- Datasheets
- 2N6517TA
2N6517TA Documents
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N6517TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 50mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.Single BJT transistor can take a breakdown input voltage of 350V volts.During maximum operation, collector current can be as low as 500mA volts.
2N6517TA Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
2N6517TA Applications
There are a lot of ON Semiconductor
2N6517TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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