2N6517RLRPG
- Mfr.Part #
- 2N6517RLRPG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A TO92
- Stock
- 7,012
- In Stock :
- 7,012
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Max Collector Current :
- 500mA
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 200MHz
- Reach Compliance Code :
- Unknown
- Collector Emitter Voltage (VCEO) :
- 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.21.00.95
- Transition Frequency :
- 40MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Current Rating :
- 500mA
- Base Part Number :
- 2N6517
- Max Power Dissipation :
- 625mW
- JESD-609 Code :
- e1
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- RoHS Compliant
- Surface Mount :
- No
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 350V
- Collector Emitter Breakdown Voltage :
- 350V
- hFE Min :
- 20
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Lifecycle Status :
- OBSOLETE (Last Updated: 2 days ago)
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1V
- Packaging :
- Tape and Box (TB)
- Collector Base Voltage (VCBO) :
- 350V
- Published :
- 2007
- Pin Count :
- 3
- Datasheets
- 2N6517RLRPG
2N6517RLRPG Documents

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N6517RLRPG Overview
This device has a DC current gain of 20 @ 50mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.In this part, there is a transition frequency of 40MHz.The maximum collector current is 500mA volts.
2N6517RLRPG Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
2N6517RLRPG Applications
There are a lot of ON Semiconductor
2N6517RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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