2N6517RLRPG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

6V

Pbfree Code :

yes

hFE Min :

20

Transistor Type :

NPN

Reach Compliance Code :

Unknown

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

500mA

Number of Terminations :

3

Surface Mount :

No

Base Part Number :

2N6517

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.95

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Gain Bandwidth Product :

200MHz

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

OBSOLETE (Last Updated: 2 days ago)

Packaging :

Tape and Box (TB)

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Number of Pins :

3

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

50nA ICBO

Collector Emitter Breakdown Voltage :

350V

Pin Count :

3

JESD-609 Code :

e1

Lead Free :

Lead Free

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

Number of Elements :

1

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

350V

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Transition Frequency :

40MHz

Max Power Dissipation :

625mW

Voltage - Rated DC :

350V

Published :

2007

Collector Emitter Voltage (VCEO) :

1V

Terminal Position :

BOTTOM

Collector Emitter Saturation Voltage :

1V

Max Collector Current :

500mA

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260