2N6517RLRP

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Pin Count :

3

Voltage - Rated DC :

350V

RoHS Status :

Non-RoHS Compliant

Collector Emitter Breakdown Voltage :

350V

Gain Bandwidth Product :

200MHz

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

240

HTS Code :

8541.21.00.95

Terminal Position :

BOTTOM

Current Rating :

500mA

Number of Elements :

1

Qualification Status :

Not Qualified

Max Power Dissipation :

625mW

JESD-609 Code :

e0

Collector Emitter Voltage (VCEO) :

1V

Number of Terminations :

3

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Terminal Finish :

Tin/Lead (Sn/Pb)

Collector Base Voltage (VCBO) :

350V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

Collector Emitter Saturation Voltage :

1V

Emitter Base Voltage (VEBO) :

6V

Current - Collector Cutoff (Max) :

50nA ICBO

Transistor Application :

SWITCHING

Base Part Number :

2N6517

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

500mA

Mounting Type :

Through Hole

Lead Free :

Contains Lead

Element Configuration :

Single

Turn Off Time-Max (toff) :

3500ns

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Packaging :

Tape and Box (TB)

Published :

2004

Mount :

Through Hole

Reach Compliance Code :

not_compliant

Transition Frequency :

40MHz

JESD-30 Code :

O-PBCY-T3

hFE Min :

20

Time@Peak Reflow Temperature-Max (s) :

30