2N6517RLRAG
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- Mfr.Part #
- 2N6517RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A TO92
- Stock
- 10,329
- In Stock ：
- 10,329
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Pins :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- 2N6517
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Collector Emitter Saturation Voltage :
- 1V
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Frequency :
- 200MHz
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- Max Collector Current :
- 500mA
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- NPN
- Published :
- 2007
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 350V
- Transition Frequency :
- 40MHz
- Current Rating :
- 500mA
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 350V
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Unknown
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 350V
- Gain Bandwidth Product :
- 200MHz
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 625mW
- hFE Min :
- 20
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Collector Base Voltage (VCBO) :
- 350V
- JESD-609 Code :
- e1
- Max Power Dissipation :
- 625mW
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Datasheets
- 2N6517RLRAG
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N6517RLRAG Overview
This device has a DC current gain of 20 @ 50mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 40MHz.A maximum collector current of 500mA volts is possible.
2N6517RLRAG Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
2N6517RLRAG Applications
There are a lot of ON Semiconductor
2N6517RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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