2N6517RLRAG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity/Channel Type :

NPN

Number of Terminations :

3

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2007

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

hFE Min :

20

Collector Emitter Saturation Voltage :

1V

Reach Compliance Code :

Unknown

Collector Emitter Breakdown Voltage :

350V

Packaging :

Tape and Reel (TR)

Base Part Number :

2N6517

Element Configuration :

Single

Transistor Element Material :

SILICON

Pbfree Code :

yes

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

350V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Current - Collector Cutoff (Max) :

50nA ICBO

Emitter Base Voltage (VEBO) :

6V

Terminal Position :

BOTTOM

Power Dissipation :

625mW

Transition Frequency :

40MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

Collector Base Voltage (VCBO) :

350V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

Gain Bandwidth Product :

200MHz

Surface Mount :

No

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

RoHS Status :

RoHS Compliant

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number of Elements :

1

Current Rating :

500mA

Max Power Dissipation :

625mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Number of Pins :

3

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

ECCN Code :

EAR99

Frequency :

200MHz

Qualification Status :

Not Qualified

Voltage - Rated DC :

350V

Max Collector Current :

500mA