2N6517RLRA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

20

Time@Peak Reflow Temperature-Max (s) :

30

Gain Bandwidth Product :

200MHz

ECCN Code :

EAR99

JESD-609 Code :

e0

Transistor Type :

NPN

Frequency :

200MHz

Max Power Dissipation :

625mW

Number of Terminations :

3

Number of Pins :

3

Transition Frequency :

40MHz

Collector Base Voltage (VCBO) :

350V

Pin Count :

3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Element Configuration :

Single

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

6V

Peak Reflow Temperature (Cel) :

240

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

BOTTOM

Polarity/Channel Type :

NPN

Terminal Finish :

Tin/Lead (Sn/Pb)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

Voltage - Rated DC :

350V

Power Dissipation :

625mW

Base Part Number :

2N6517

Number of Elements :

1

Published :

2004

Reach Compliance Code :

not_compliant

Max Collector Current :

500mA

Collector Emitter Breakdown Voltage :

350V

Collector Emitter Voltage (VCEO) :

350V

Surface Mount :

No

Current - Collector Cutoff (Max) :

50nA ICBO

RoHS Status :

Non-RoHS Compliant

Packaging :

Tape and Reel (TR)

Current Rating :

500mA

Pbfree Code :

No

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Contains Lead

Collector Emitter Saturation Voltage :

1V