2N6517G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2007

HTS Code :

8541.21.00.95

Collector Emitter Voltage (VCEO) :

1V

Number of Terminations :

3

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

350V

Voltage - Rated DC :

350V

JESD-609 Code :

e1

Element Configuration :

Single

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

hFE Min :

20

Transistor Application :

SWITCHING

Packaging :

Bulk

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

50nA ICBO

RoHS Status :

RoHS Compliant

Gain Bandwidth Product :

200MHz

Qualification Status :

Not Qualified

Collector Base Voltage (VCBO) :

350V

Current Rating :

500mA

ECCN Code :

EAR99

Power Dissipation :

625mW

Mounting Type :

Through Hole

Max Collector Current :

500mA

Transition Frequency :

40MHz

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Collector Emitter Saturation Voltage :

1V

Emitter Base Voltage (VEBO) :

6V

Number of Pins :

3

Transistor Type :

NPN

Max Power Dissipation :

625mW

Surface Mount :

No

Pin Count :

3

Base Part Number :

2N6517

Terminal Position :

BOTTOM

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)