2N6517G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

1V

Pin Count :

3

Collector Emitter Saturation Voltage :

1V

Gain Bandwidth Product :

200MHz

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.95

Current Rating :

500mA

hFE Min :

20

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

JESD-609 Code :

e1

Mounting Type :

Through Hole

Packaging :

Bulk

Qualification Status :

Not Qualified

Number of Terminations :

3

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

350V

Current - Collector Cutoff (Max) :

50nA ICBO

Pbfree Code :

yes

Max Collector Current :

500mA

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Pins :

3

Transition Frequency :

40MHz

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Collector Emitter Breakdown Voltage :

350V

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Surface Mount :

No

Element Configuration :

Single

Power Dissipation :

625mW

Base Part Number :

2N6517

Terminal Position :

BOTTOM

Max Power Dissipation :

625mW

Emitter Base Voltage (VEBO) :

6V

Published :

2007

Collector Base Voltage (VCBO) :

350V

ECCN Code :

EAR99

Transistor Type :

NPN