2N6517CTA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

350V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

350V

Width :

3.86mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mount :

Through Hole

Collector Emitter Voltage (VCEO) :

400V

Published :

2007

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

hFE Min :

30

Gain Bandwidth Product :

200MHz

Length :

4.58mm

Power Dissipation :

625mW

Polarity/Channel Type :

NPN

Contact Plating :

Tin

Qualification Status :

Not Qualified

Packaging :

Tape and Box (TB)

Mounting Type :

Through Hole

JESD-609 Code :

e3

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

350V

Max Collector Current :

500mA

Height :

4.58mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

625mW

Number of Terminations :

3

Max Breakdown Voltage :

350V

Current - Collector Cutoff (Max) :

50nA ICBO

Operating Temperature :

150°C TJ

Collector Emitter Saturation Voltage :

1V

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Factory Lead Time :

7 Weeks

Transition Frequency :

40MHz

Number of Pins :

3

Base Part Number :

2N6517

Terminal Position :

BOTTOM

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

Number of Elements :

1

Emitter Base Voltage (VEBO) :

6V

Pbfree Code :

yes

Current Rating :

500mA

Weight :

240mg

Frequency :

200MHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED