2N6517-AP
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- Mfr.Part #
- 2N6517-AP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A TO92
- Stock
- 19,548
- In Stock ：
- 19,548
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Power - Max :
- 625mW
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 10V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 350V
- Frequency - Transition :
- 200MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Datasheets
- 2N6517-AP
NPN -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) Formed Leads Through Hole
2N6517-AP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 30mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 5mA, 50mA.This device displays a 350V maximum voltage - Collector Emitter Breakdown.
2N6517-AP Features
the DC current gain for this device is 30 @ 30mA 10V
the vce saturation(Max) is 1V @ 5mA, 50mA
2N6517-AP Applications
There are a lot of Micro Commercial Co
2N6517-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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