2N6517

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

1V

Peak Reflow Temperature (Cel) :

240

hFE Min :

20

Terminal Finish :

Tin/Lead (Sn/Pb)

Max Collector Current :

500mA

Terminal Position :

BOTTOM

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Current Rating :

500mA

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

350V

Voltage - Rated DC :

350V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

Qualification Status :

Not Qualified

Element Configuration :

Single

Collector Base Voltage (VCBO) :

350V

HTS Code :

8541.21.00.95

Emitter Base Voltage (VEBO) :

6V

Number of Pins :

3

Max Power Dissipation :

625mW

Transistor Element Material :

SILICON

Base Part Number :

2N6517

Published :

2004

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

1V

Polarity/Channel Type :

NPN

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Power Dissipation :

625mW

Gain Bandwidth Product :

200MHz

Current - Collector Cutoff (Max) :

50nA ICBO

JESD-609 Code :

e0

Pbfree Code :

No

Reach Compliance Code :

not_compliant

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

30

Transition Frequency :

40MHz

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Number of Terminations :

3

Lead Free :

Contains Lead

Mounting Type :

Through Hole

Packaging :

Bulk