2N6515RLRM
- Mfr.Part #
- 2N6515RLRM
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 250V 0.5A TO92
- Stock
- 28,269
- In Stock :
- 28,269
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 500mA
- Collector Base Voltage (VCBO) :
- 250V
- Surface Mount :
- No
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 250V
- Max Power Dissipation :
- 625mW
- Turn On Time-Max (ton) :
- 200ns
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- HTS Code :
- 8541.21.00.95
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Base Part Number :
- 2N6515
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 240
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e0
- Reach Compliance Code :
- not_compliant
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 250V
- Number of Elements :
- 1
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- hFE Min :
- 35
- Lead Free :
- Contains Lead
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 50mA 10V
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 1V
- Collector Emitter Saturation Voltage :
- 1V
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Tape and Box (TB)
- Max Collector Current :
- 500mA
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Published :
- 2004
- Gain Bandwidth Product :
- 200MHz
- Transition Frequency :
- 40MHz
- Datasheets
- 2N6515RLRM
2N6515RLRM Documents

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N6515RLRM Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 45 @ 50mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 40MHz.A maximum collector current of 500mA volts can be achieved.
2N6515RLRM Features
the DC current gain for this device is 45 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
2N6515RLRM Applications
There are a lot of ON Semiconductor
2N6515RLRM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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