2N6515RLRM

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 50mA 10V

Published :

2004

Collector Base Voltage (VCBO) :

250V

Max Collector Current :

500mA

Polarity/Channel Type :

NPN

Transition Frequency :

40MHz

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

hFE Min :

35

Mounting Type :

Through Hole

Collector Emitter Saturation Voltage :

1V

Current Rating :

500mA

Terminal Position :

BOTTOM

Transistor Application :

SWITCHING

HTS Code :

8541.21.00.95

Number of Pins :

3

Voltage - Rated DC :

250V

Emitter Base Voltage (VEBO) :

6V

Collector Emitter Breakdown Voltage :

250V

Current - Collector Cutoff (Max) :

50nA ICBO

Qualification Status :

Not Qualified

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 weeks ago)

Transistor Element Material :

SILICON

Pin Count :

3

Reach Compliance Code :

not_compliant

Collector Emitter Voltage (VCEO) :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Type :

NPN

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Box (TB)

Base Part Number :

2N6515

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Turn On Time-Max (ton) :

200ns

JESD-609 Code :

e0

Max Power Dissipation :

625mW

Pbfree Code :

No

Gain Bandwidth Product :

200MHz

Number of Terminations :

3

Element Configuration :

Single

Surface Mount :

No

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

240