2N6515
- Mfr.Part #
- 2N6515
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 250V 0.5A TO92
- Stock
- 13,522
- In Stock :
- 13,522
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Transition Frequency :
- 40MHz
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- hFE Min :
- 35
- Emitter Base Voltage (VEBO) :
- 6V
- Peak Reflow Temperature (Cel) :
- 240
- Gain Bandwidth Product :
- 200MHz
- Polarity/Channel Type :
- NPN
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Contains Lead
- Collector Emitter Voltage (VCEO) :
- 250V
- Base Part Number :
- 2N6515
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Qualification Status :
- Not Qualified
- HTS Code :
- 8541.21.00.95
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Collector Current :
- 500mA
- Element Configuration :
- Single
- Current Rating :
- 500mA
- Number of Terminations :
- 3
- Turn On Time-Max (ton) :
- 200ns
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Emitter Saturation Voltage :
- 1V
- Number of Elements :
- 1
- Surface Mount :
- No
- Collector Emitter Breakdown Voltage :
- 250V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Reach Compliance Code :
- not_compliant
- Lifecycle Status :
- Obsolete (Last Updated: 2 weeks ago)
- Published :
- 2004
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 50mA 10V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- No
- Max Frequency :
- 200MHz
- JESD-609 Code :
- e0
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Max Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 250V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Voltage - Rated DC :
- 250V
- Datasheets
- 2N6515
2N6515 Documents
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N6515 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 45 @ 50mA 10V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 40MHz in the part.When collector current reaches its maximum, it can reach 500mA volts.
2N6515 Features
the DC current gain for this device is 45 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
2N6515 Applications
There are a lot of ON Semiconductor
2N6515 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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