2N6515

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 50mA 10V

Number of Elements :

1

Published :

2004

Terminal Position :

BOTTOM

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Collector Base Voltage (VCBO) :

250V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Lead Free :

Contains Lead

JESD-609 Code :

e0

Turn On Time-Max (ton) :

200ns

Pin Count :

3

Gain Bandwidth Product :

200MHz

Transition Frequency :

40MHz

Transistor Element Material :

SILICON

Max Frequency :

200MHz

Pbfree Code :

No

Number of Terminations :

3

Element Configuration :

Single

Terminal Finish :

Tin/Lead (Sn/Pb)

Current Rating :

500mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

250V

Emitter Base Voltage (VEBO) :

6V

Max Collector Current :

500mA

Peak Reflow Temperature (Cel) :

240

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Collector Emitter Voltage (VCEO) :

250V

Max Power Dissipation :

625mW

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Number of Pins :

3

hFE Min :

35

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Packaging :

Bulk

Base Part Number :

2N6515

Lifecycle Status :

Obsolete (Last Updated: 2 weeks ago)

Collector Emitter Saturation Voltage :

1V

Voltage - Rated DC :

250V

HTS Code :

8541.21.00.95

RoHS Status :

Non-RoHS Compliant

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

50nA ICBO