2N6351

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

5 A

Number of Elements :

1

Power - Max :

1 W

Package :

Bulk

Configuration :

Darlington

JESD-30 Code :

O-MBCY-W4

Package / Case :

TO-205AC, TO-33-4 Metal Can

Max Operating Temperature :

200 °C

DC Current Gain-Min (hFE) :

200

Element Configuration :

Single

Min Operating Temperature :

-65 °C

Voltage - Collector Emitter Breakdown (Max) :

150 V

Terminal Form :

Wire

Transistor Type :

NPN - Darlington

RoHS :

Compliant

Frequency - Transition :

-

HTS Code :

8541.29.00.95

Collector Base Voltage (VCBO) :

150 V

JESD-609 Code :

e0

Contact Plating :

Lead, Tin

Packaging :

Bulk

Collector Current-Max (IC) :

5 A

Terminal Position :

BOTTOM

Series :

-

Surface Mount :

No

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

150 V

Supplier Device Package :

TO-33

Qualification Status :

Not Qualified

Collector Emitter Saturation Voltage :

2.5 V

Pbfree Code :

No

Package Shape :

Round

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 10mA, 5A

JEDEC-95 Code :

TO-33

Number of Pins :

4

Reach Compliance Code :

not_compliant

Number of Terminals :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Emitter Base Voltage (VEBO) :

12 V

Product Status :

Active

Mount :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 5A, 5V

Current - Collector Cutoff (Max) :

-

Mounting Type :

Through Hole

Pin Count :

4

Polarity/Channel Type :

NPN

Terminal Finish :

Tin/Lead (Sn/Pb)

Operating Temperature :

-65°C ~ 200°C (TJ)

Transistor Element Material :

SILICON