2N6299P
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- Mfr.Part #
- 2N6299P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 18,621
- In Stock ：
- 18,621
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Brand :
- Microchip Technology
- Series :
- -
- Transistor Type :
- PNP - Darlington
- Subcategory :
- Transistors
- Package / Case :
- TO-213AA, TO-66-2
- Product Status :
- Active
- Power - Max :
- 64 W
- Manufacturer :
- Microchip
- Operating Temperature :
- -65°C ~ 175°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Current - Collector (Ic) (Max) :
- 8 A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 4A, 3V
- Product Category :
- Bipolar Transistors - BJT
- Product Type :
- BJTs - Bipolar Transistors
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 500μA
- Package :
- Bulk
- Supplier Device Package :
- TO-66 (TO-213AA)
- Frequency - Transition :
- -
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 80mA, 8A
- Datasheets
- 2N6299P
PNP - Darlington -65°C ~ 175°C (TJ) 500μA TO-213AA, TO-66-2 Through Hole
2N6299P Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 4A, 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 80 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N6299P Features
the DC current gain for this device is 750 @ 4A, 3V
the vce saturation(Max) is 2V @ 80mA, 8A
the supplier device package of TO-66 (TO-213AA)
2N6299P Applications
There are a lot of Microchip Technology
2N6299P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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