2N6294
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- Mfr.Part #
- 2N6294
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A TO66
- Stock
- 164
- In Stock ：
- 164
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-66
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A, 3V
- Frequency - Transition :
- -
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Manufacturer :
- NTE Electronics
- Power - Max :
- 50 W
- Package / Case :
- TO-213AA, TO-66-2
- Number of Pins :
- 2
- Transistor Type :
- NPN - Darlington
- Current - Collector (Ic) (Max) :
- 4 A
- Series :
- -
- Current - Collector Cutoff (Max) :
- 500μA
- Package :
- Bag
- Product Status :
- Active
- Mounting Type :
- Through Hole
- Polarity :
- NPN
- RoHS :
- Compliant
- Datasheets
- 2N6294
NPN - Darlington -65°C ~ 200°C (TJ) 500μA TO-213AA, TO-66-2 Through Hole
2N6294 Overview
This device has a DC current gain of 750 @ 2A, 3V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-66.Detection of Collector Emitter Breakdown at 60 V maximal voltage is present.
2N6294 Features
the DC current gain for this device is 750 @ 2A, 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the supplier device package of TO-66
2N6294 Applications
There are a lot of NTE Electronics, Inc
2N6294 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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