2N6287G
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- Mfr.Part #
- 2N6287G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 20A TO204
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 100V
- Power Dissipation :
- 160W
- Base Part Number :
- 2N6287
- Number of Pins :
- 2
- Current - Collector Cutoff (Max) :
- 1mA
- Transistor Type :
- PNP - Darlington
- Current Rating :
- -20A
- Width :
- 26.67mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time :
- 2 Weeks
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-204AA, TO-3
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 100V
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 2V
- Case Connection :
- COLLECTOR
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 160W
- Height :
- 8.51mm
- RoHS Status :
- ROHS3 Compliant
- Polarity :
- PNP
- Terminal Position :
- BOTTOM
- Length :
- 39.37mm
- Max Collector Current :
- 20A
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 4MHz
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 200mA, 20A
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~200°C TJ
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 10A 3V
- Packaging :
- Tray
- Weight :
- 13.607771g
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Continuous Collector Current :
- 20A
- Pin Count :
- 2
- Voltage - Rated DC :
- -100V
- Published :
- 2008
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 2
- Terminal Form :
- PIN/PEG
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 100V
- Datasheets
- 2N6287G
2N6287G Documents
PNP - Darlington -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole
2N6287G Overview
In this device, the DC current gain is 750 @ 10A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 200mA, 20A.A 20A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -20A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 20A volts at Single BJT transistors maximum.
2N6287G Features
the DC current gain for this device is 750 @ 10A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 5V
the current rating of this device is -20A
a transition frequency of 4MHz
2N6287G Applications
There are a lot of ON Semiconductor
2N6287G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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