2N6284
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- Mfr.Part #
- 2N6284
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 20A TO3
- Stock
- 22,358
- In Stock ：
- 22,358
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- Polarity :
- NPN
- Number of Elements :
- 1
- Terminal Form :
- PIN/PEG
- Max Power Dissipation :
- 160W
- Base Part Number :
- 2N6284
- Operating Temperature :
- -65°C~200°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 1mA
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 100V
- Pin Count :
- 2
- Collector Emitter Voltage (VCEO) :
- 100V
- Case Connection :
- COLLECTOR
- Continuous Collector Current :
- 20A
- Package / Case :
- TO-204AA, TO-3
- Max Collector Current :
- 20A
- Transistor Type :
- NPN - Darlington
- Collector Emitter Saturation Voltage :
- 2V
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 100V
- Mounting Type :
- Through Hole
- Number of Pins :
- 2
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- Factory Lead Time :
- 5 Weeks
- Transistor Element Material :
- SILICON
- Height :
- 26.67mm
- Width :
- 8.509mm
- ECCN Code :
- EAR99
- Packaging :
- Tray
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 13.607771g
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 200mA, 20A
- Terminal Position :
- BOTTOM
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Current Rating :
- 20A
- Length :
- 39.37mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transition Frequency :
- 4MHz
- Voltage - Rated DC :
- 100V
- Published :
- 1998
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 10A 3V
- Power Dissipation :
- 160W
- Datasheets
- 2N6284
NPN - Darlington -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole
2N6284G Overview
DC current gain in this device equals 750 @ 10A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 200mA, 20A.Single BJT transistor is essential to maintain the continuous collector voltage at 20A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 20A current rating.As a result, the part has a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 20A volts.
2N6284G Features
the DC current gain for this device is 750 @ 10A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 5V
the current rating of this device is 20A
a transition frequency of 4MHz
2N6284G Applications
There are a lot of ON Semiconductor
2N6284G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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