2N6282
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- Mfr.Part #
- 2N6282
- Manufacturer
- Microchip Technology
- Package / Case
- Die
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 26,231
- In Stock ：
- 26,231
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- Die
- Power - Max :
- 160 W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 10A, 3V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 200mA, 20A
- Current - Collector Cutoff (Max) :
- 1mA
- Transistor Type :
- NPN - Darlington
- Manufacturer :
- Microchip
- Package / Case :
- Die
- Brand :
- Microchip Technology / Atmel
- Frequency - Transition :
- -
- Product Status :
- Active
- Subcategory :
- Transistors
- Product Type :
- BJTs - Bipolar Transistors
- Product Category :
- Bipolar Transistors - BJT
- Current - Collector (Ic) (Max) :
- 20 A
- Mounting Type :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Package :
- Bulk
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Series :
- -
- Datasheets
- 2N6282
NPN - Darlington -65°C ~ 200°C (TJ) 1mA Die Surface Mount
2N6282 Overview
In this device, the DC current gain is 750 @ 10A, 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 200mA, 20A.Product comes in the supplier's device package Die.There is a 60 V maximal voltage in the device due to collector-emitter breakdown.
2N6282 Features
the DC current gain for this device is 750 @ 10A, 3V
the vce saturation(Max) is 3V @ 200mA, 20A
the supplier device package of Die
2N6282 Applications
There are a lot of Microchip Technology
2N6282 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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