2N6076
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- Mfr.Part #
- 2N6076
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.5A TO92-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Current - Collector (Ic) (Max) :
- 500mA
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 625mW
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Current - Collector Cutoff (Max) :
- 100nA
- Supplier Device Package :
- TO-92-3
- Packaging :
- Bulk
- Datasheets
- 2N6076
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N6076 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 25V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N6076 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 250mV @ 1mA, 10mA
the supplier device package of TO-92-3
2N6076 Applications
There are a lot of Rochester Electronics, LLC
2N6076 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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