2N6052

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Mfr.Part #
2N6052
Manufacturer
Microchip Technology
Package / Case
TO-204AA, TO-3
Datasheet
Download
Description
PNP POWER TRANSISTOR SILICON AMP
Stock
34,392
In Stock :
34,392

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Case Connection :
COLLECTOR
Transistor Type :
PNP - Darlington
Vce Saturation (Max) @ Ib, Ic :
3V @ 120mA, 12A
Pin Count :
2
Operating Temperature :
-65°C~200°C TJ
Transition Frequency :
4MHz
Polarity/Channel Type :
PNP
Current - Collector Cutoff (Max) :
1mA
Terminal Form :
PIN/PEG
Mounting Type :
Through Hole
Terminal Position :
BOTTOM
Transistor Application :
SWITCHING
RoHS Status :
Non-RoHS Compliant
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
30
Transistor Element Material :
SILICON
Current - Collector (Ic) (Max) :
12A
Peak Reflow Temperature (Cel) :
240
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 6A 3V
Voltage - Collector Emitter Breakdown (Max) :
100V
Configuration :
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Reach Compliance Code :
Unknown
JESD-609 Code :
e0
Power - Max :
150W
Terminal Finish :
TIN LEAD
JESD-30 Code :
O-MBFM-P2
Surface Mount :
No
Number of Terminations :
2
Pbfree Code :
No
Qualification Status :
COMMERCIAL
Package / Case :
TO-204AA, TO-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
2N6052
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N6052 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~200°C TJ, Mounting Type:Through Hole, Number of Terminations:2, Package / Case:TO-204AA, TO-3, 2N6052 pinout, 2N6052 datasheet PDF, 2N6052 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N6052 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N6052


PNP - Darlington -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Through Hole

2N6052 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 6A 3V.When VCE saturation is 3V @ 120mA, 12A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 4MHz.The device has a 100V maximal voltage - Collector Emitter Breakdown.

2N6052 Features


the DC current gain for this device is 750 @ 6A 3V
the vce saturation(Max) is 3V @ 120mA, 12A
a transition frequency of 4MHz


2N6052 Applications


There are a lot of Rochester Electronics, LLC
2N6052 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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