2N6045
- Mfr.Part #
- 2N6045
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A TO220
- Stock
- 973
- In Stock :
- 973
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 20μA
- Weight :
- 4.535924g
- Lead Free :
- Lead Free
- Width :
- 4.826mm
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity :
- NPN
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Radiation Hardening :
- No
- Length :
- 10.2616mm
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Collector Current :
- 8A
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- 8A
- Collector Emitter Breakdown Voltage :
- 100V
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 75W
- Package / Case :
- TO-220-3
- Collector Emitter Saturation Voltage :
- 2V
- Transistor Type :
- NPN - Darlington
- Factory Lead Time :
- 2 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Voltage - Rated DC :
- -100V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Current Rating :
- 8A
- Surface Mount :
- No
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Operating Temperature :
- -65°C~150°C TJ
- hFE Min :
- 1000
- Number of Pins :
- 3
- Max Power Dissipation :
- 75W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- Published :
- 2006
- Height :
- 15.748mm
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- 2N6045
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2N6045

NPN - Darlington -65°C~150°C TJ 20μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
2N6045G Overview
DC current gain in this device equals 1000 @ 3A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 12mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at 8A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.In extreme cases, the collector current can be as low as 8A volts.
2N6045G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
2N6045G Applications
There are a lot of ON Semiconductor
2N6045G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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