2N6042G
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- Mfr.Part #
- 2N6042G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 8A TO220
- Stock
- 387
- In Stock ：
- 387
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Weight :
- 4.535924g
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 100V
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Saturation Voltage :
- 2V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -100V
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Emitter Breakdown Voltage :
- 100V
- Pin Count :
- 3
- Max Collector Current :
- 8A
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- JEDEC-95 Code :
- TO-220AB
- Collector Base Voltage (VCBO) :
- 100V
- Package / Case :
- TO-220-3
- Continuous Collector Current :
- 8A
- ECCN Code :
- EAR99
- Current Rating :
- -8A
- Power Dissipation :
- 75W
- Current - Collector Cutoff (Max) :
- 20μA
- Number of Terminations :
- 3
- Polarity :
- PNP
- Operating Temperature :
- -65°C~150°C TJ
- Surface Mount :
- No
- Base Part Number :
- 2N6042
- Case Connection :
- COLLECTOR
- Contact Plating :
- Tin
- Published :
- 2000
- Height :
- 15.748mm
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Max Power Dissipation :
- 75W
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Width :
- 4.826mm
- Mounting Type :
- Through Hole
- Length :
- 10.2616mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP - Darlington
- Datasheets
- 2N6042G
PNP - Darlington -65°C~150°C TJ 20μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
2N6042G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 12mA, 3A.Single BJT transistor is recommended to keep the continuous collector voltage at 8A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
2N6042G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
2N6042G Applications
There are a lot of ON Semiconductor
2N6042G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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