2N6040
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- Mfr.Part #
- 2N6040
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 8A TO220
- Stock
- 46,712
- In Stock ：
- 46,712
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 2V
- Width :
- 4.83mm
- Voltage - Rated DC :
- -60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Published :
- 2001
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JEDEC-95 Code :
- TO-220AB
- Pin Count :
- 3
- Continuous Collector Current :
- 8A
- Current - Collector Cutoff (Max) :
- 20μA
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 60V
- Length :
- 10.53mm
- Surface Mount :
- No
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Transistor Type :
- PNP - Darlington
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transition Frequency :
- 4MHz
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 60V
- hFE Min :
- 1000
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 16mA, 4A
- Weight :
- 6.000006g
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- Current Rating :
- 8A
- Max Power Dissipation :
- 75W
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Base Part Number :
- 2N6040
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- 8A
- Factory Lead Time :
- 2 Weeks
- Polarity :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 75W
- Mounting Type :
- Through Hole
- Height :
- 15.75mm
- Lead Free :
- Lead Free
- Datasheets
- 2N6040
PNP - Darlington -65°C~150°C TJ 20μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
2N6040G Overview
In this device, the DC current gain is 1000 @ 4A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 16mA, 4A.A 8A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 8A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
2N6040G Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 4MHz
2N6040G Applications
There are a lot of ON Semiconductor
2N6040G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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