2N6039G
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- Mfr.Part #
- 2N6039G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A TO126
- Stock
- 2,967
- In Stock ：
- 2,967
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 4A
- Max Power Dissipation :
- 40W
- Continuous Collector Current :
- 4A
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Length :
- 11.04mm
- Current Rating :
- 4A
- Transistor Type :
- NPN - Darlington
- Lead Free :
- Lead Free
- Polarity :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 7.74mm
- Mounting Type :
- Through Hole
- Height :
- 2.66mm
- Pin Count :
- 3
- Number of Elements :
- 1
- Package / Case :
- TO-225AA, TO-126-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Base Part Number :
- 2N6039
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Emitter Saturation Voltage :
- 2V
- Factory Lead Time :
- 8 Weeks
- Halogen Free :
- Halogen Free
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Published :
- 2000
- Surface Mount :
- No
- Transition Frequency :
- 25MHz
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 80V
- Power Dissipation :
- 40W
- Packaging :
- Bulk
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Weight :
- 4.535924g
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100μA
- Datasheets
- 2N6039G
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NPN - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6039G Overview
In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).25MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2N6039G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6039G Applications
There are a lot of ON Semiconductor
2N6039G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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