2N6039
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- Mfr.Part #
- 2N6039
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A SOT32-3
- Stock
- 64
- In Stock ：
- 64
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 2.66mm
- Transistor Application :
- AMPLIFIER
- Continuous Collector Current :
- 4A
- Published :
- 2000
- Number of Elements :
- 1
- Packaging :
- Bulk
- Transition Frequency :
- 25MHz
- Number of Terminations :
- 3
- Surface Mount :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Weight :
- 4.535924g
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 4A
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Saturation Voltage :
- 2V
- Transistor Element Material :
- SILICON
- Width :
- 7.74mm
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Current - Collector Cutoff (Max) :
- 100μA
- JESD-609 Code :
- e3
- Operating Temperature :
- -65°C~150°C TJ
- Max Power Dissipation :
- 40W
- Collector Emitter Voltage (VCEO) :
- 80V
- Length :
- 11.04mm
- Factory Lead Time :
- 8 Weeks
- Halogen Free :
- Halogen Free
- Contact Plating :
- Tin
- Transistor Type :
- NPN - Darlington
- Voltage - Rated DC :
- 80V
- Radiation Hardening :
- No
- Power Dissipation :
- 40W
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Base Part Number :
- 2N6039
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Polarity :
- NPN
- Lead Free :
- Lead Free
- Current Rating :
- 4A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- 2N6039
NPN - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6039G Overview
In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).25MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2N6039G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6039G Applications
There are a lot of ON Semiconductor
2N6039G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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