2N6039

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Mfr.Part #
2N6039
Manufacturer
STMicroelectronics
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN DARL 80V 4A SOT32-3
Stock
13,595
In Stock :
13,595

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Power Dissipation :
40W
Pin Count :
3
Number of Pins :
3
Transition Frequency :
25MHz
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
2V
Weight :
4.535924g
Transistor Type :
NPN - Darlington
ECCN Code :
EAR99
Current Rating :
4A
JESD-609 Code :
e3
Radiation Hardening :
No
Factory Lead Time :
8 Weeks
Base Part Number :
2N6039
Polarity :
NPN
Halogen Free :
Halogen Free
Transistor Application :
AMPLIFIER
Width :
7.74mm
Packaging :
Bulk
Surface Mount :
No
Contact Plating :
Tin
Max Collector Current :
4A
Mounting Type :
Through Hole
Emitter Base Voltage (VEBO) :
5V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Collector Emitter Breakdown Voltage :
80V
Height :
2.66mm
Voltage - Rated DC :
80V
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Collector Emitter Voltage (VCEO) :
80V
Vce Saturation (Max) @ Ib, Ic :
3V @ 40mA, 4A
Time@Peak Reflow Temperature-Max (s) :
40
REACH SVHC :
No SVHC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-225AA, TO-126-3
Max Power Dissipation :
40W
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Collector Base Voltage (VCBO) :
80V
Operating Temperature :
-65°C~150°C TJ
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
Element Configuration :
Single
Continuous Collector Current :
4A
Published :
2000
Number of Terminations :
3
Length :
11.04mm
Current - Collector Cutoff (Max) :
100μA
Datasheets
2N6039
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics 2N6039 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:2N6039, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, 2N6039 pinout, 2N6039 datasheet PDF, 2N6039 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics 2N6039 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics 2N6039


NPN - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole

2N6039G Overview


In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).25MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

2N6039G Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz


2N6039G Applications


There are a lot of ON Semiconductor
2N6039G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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