2N6039
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- Mfr.Part #
- 2N6039
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS DARL NPN 4A 80V TO225AA
- Stock
- 30,131
- In Stock ：
- 30,131
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2000
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Halogen Free :
- Halogen Free
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Polarity :
- NPN
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 80V
- Power Dissipation :
- 40W
- Max Collector Current :
- 4A
- JESD-609 Code :
- e3
- Operating Temperature :
- -65°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 80V
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Base Part Number :
- 2N6039
- Transition Frequency :
- 25MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN - Darlington
- Weight :
- 4.535924g
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 80V
- Packaging :
- Bulk
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Height :
- 2.66mm
- Lead Free :
- Lead Free
- Current Rating :
- 4A
- Length :
- 11.04mm
- Width :
- 7.74mm
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Contact Plating :
- Tin
- Max Power Dissipation :
- 40W
- Current - Collector Cutoff (Max) :
- 100μA
- Continuous Collector Current :
- 4A
- Datasheets
- 2N6039
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NPN - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6039G Overview
In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.Maintaining the continuous collector voltage at 4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).25MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
2N6039G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6039G Applications
There are a lot of ON Semiconductor
2N6039G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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