2N6038
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- Mfr.Part #
- 2N6038
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A TO126
- Stock
- 14,588
- In Stock ：
- 14,588
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100μA
- Package / Case :
- TO-225AA, TO-126-3
- Max Collector Current :
- 4A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 2 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Continuous Collector Current :
- 4A
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Base Part Number :
- 2N6038
- Polarity :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Voltage - Rated DC :
- 60V
- Radiation Hardening :
- No
- Surface Mount :
- No
- Current Rating :
- 4A
- Collector Emitter Saturation Voltage :
- 2V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Power Dissipation :
- 40W
- Length :
- 7.74mm
- Transition Frequency :
- 25MHz
- Width :
- 2.66mm
- Pbfree Code :
- yes
- Transistor Type :
- NPN - Darlington
- Number of Terminations :
- 3
- Halogen Free :
- Halogen Free
- REACH SVHC :
- No SVHC
- Weight :
- 4.535924g
- Published :
- 2008
- Height :
- 11.04mm
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Bulk
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 40W
- Datasheets
- 2N6038
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NPN - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6038G Overview
DC current gain in this device equals 750 @ 2A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 40mA, 4A.Single BJT transistor is essential to maintain the continuous collector voltage at 4A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As a result, the part has a transition frequency of 25MHz.In extreme cases, the collector current can be as low as 4A volts.
2N6038G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6038G Applications
There are a lot of ON Semiconductor
2N6038G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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