2N6036G
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- Mfr.Part #
- 2N6036G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 4A TO126
- Stock
- 25,062
- In Stock ：
- 25,062
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Terminations :
- 3
- Factory Lead Time :
- 2 Weeks
- Power Dissipation :
- 40W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP - Darlington
- Package / Case :
- TO-225AA, TO-126-3
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Published :
- 2008
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- JESD-609 Code :
- e3
- Length :
- 8.89mm
- Packaging :
- Bulk
- Max Collector Current :
- 4A
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Continuous Collector Current :
- 4A
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Height :
- 6.35mm
- Voltage - Rated DC :
- -80V
- Halogen Free :
- Halogen Free
- Transition Frequency :
- 25MHz
- Element Configuration :
- Single
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Polarity :
- PNP
- Current - Collector Cutoff (Max) :
- 100μA
- Weight :
- 4.535924g
- Width :
- 6.35mm
- Max Power Dissipation :
- 40W
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 80V
- Current Rating :
- -4A
- Operating Temperature :
- -65°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Base Part Number :
- 2N6036
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Emitter Saturation Voltage :
- 2V
- Datasheets
- 2N6036G
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PNP - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6036G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 2A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 40mA, 4A.Continuous collector voltages of 4A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 25MHz.During maximum operation, collector current can be as low as 4A volts.
2N6036G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 25MHz
2N6036G Applications
There are a lot of ON Semiconductor
2N6036G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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