2N6036
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- Mfr.Part #
- 2N6036
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 4A SOT32
- Stock
- 11,003
- In Stock ：
- 11,003
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2008
- Height :
- 6.35mm
- Collector Emitter Breakdown Voltage :
- 80V
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Emitter Saturation Voltage :
- 2V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Width :
- 6.35mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100μA
- Transistor Type :
- PNP - Darlington
- Polarity :
- PNP
- Surface Mount :
- No
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- 2N6036
- Length :
- 8.89mm
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Package / Case :
- TO-225AA, TO-126-3
- Max Power Dissipation :
- 40W
- Transition Frequency :
- 25MHz
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -80V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 40W
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Continuous Collector Current :
- 4A
- ECCN Code :
- EAR99
- Halogen Free :
- Halogen Free
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Collector Base Voltage (VCBO) :
- 80V
- Current Rating :
- -4A
- Weight :
- 4.535924g
- Packaging :
- Bulk
- Factory Lead Time :
- 2 Weeks
- Number of Pins :
- 3
- Max Collector Current :
- 4A
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Datasheets
- 2N6036
PNP - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6036G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 2A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 40mA, 4A.Continuous collector voltages of 4A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 25MHz.During maximum operation, collector current can be as low as 4A volts.
2N6036G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 25MHz
2N6036G Applications
There are a lot of ON Semiconductor
2N6036G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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