2N6036
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- Mfr.Part #
- 2N6036
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 4A TO126
- Stock
- 15
- In Stock ：
- 15
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- Max Collector Current :
- 4A
- Transistor Type :
- PNP - Darlington
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 2 Weeks
- Number of Terminations :
- 3
- Weight :
- 4.535924g
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 80V
- Halogen Free :
- Halogen Free
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Saturation Voltage :
- 2V
- Length :
- 8.89mm
- Operating Temperature :
- -65°C~150°C TJ
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Power Dissipation :
- 40W
- Width :
- 6.35mm
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Lead Free :
- Lead Free
- Current Rating :
- -4A
- Base Part Number :
- 2N6036
- Packaging :
- Bulk
- Number of Pins :
- 3
- Polarity :
- PNP
- Voltage - Rated DC :
- -80V
- Collector Emitter Breakdown Voltage :
- 80V
- Max Power Dissipation :
- 40W
- Surface Mount :
- No
- Height :
- 6.35mm
- Transition Frequency :
- 25MHz
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 100μA
- Transistor Application :
- AMPLIFIER
- Continuous Collector Current :
- 4A
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Package / Case :
- TO-225AA, TO-126-3
- Published :
- 2008
- Datasheets
- 2N6036
PNP - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6036G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 2A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 40mA, 4A.Continuous collector voltages of 4A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 25MHz.During maximum operation, collector current can be as low as 4A volts.
2N6036G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 25MHz
2N6036G Applications
There are a lot of ON Semiconductor
2N6036G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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