2N6035G
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- Mfr.Part #
- 2N6035G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 4A TO126
- Stock
- 5,520
- In Stock ：
- 5,520
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Application :
- AMPLIFIER
- Weight :
- 4.535924g
- Number of Elements :
- 1
- Packaging :
- Bulk
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100μA
- Pin Count :
- 3
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Polarity :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-225AA, TO-126-3
- Transition Frequency :
- 25MHz
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 6.35mm
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- Width :
- 6.35mm
- Transistor Type :
- PNP - Darlington
- Height :
- 6.35mm
- Current Rating :
- 4A
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2V
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 100
- Base Part Number :
- 2N6035
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Max Collector Current :
- 4A
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2012
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -60V
- Halogen Free :
- Halogen Free
- Max Power Dissipation :
- 40W
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Datasheets
- 2N6035G
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PNP - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6035G Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.In this part, there is a transition frequency of 25MHz.The maximum collector current is 4A volts.
2N6035G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6035G Applications
There are a lot of ON Semiconductor
2N6035G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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