2N6034
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- Mfr.Part #
- 2N6034
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 40V 4A TO126
- Stock
- 28,360
- In Stock ：
- 28,360
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Packaging :
- Bulk
- Continuous Collector Current :
- 4A
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100μA
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 2V
- Surface Mount :
- No
- Polarity :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Collector Emitter Voltage (VCEO) :
- 40V
- Transition Frequency :
- 25MHz
- ECCN Code :
- EAR99
- Height :
- 11.04mm
- Current Rating :
- 4A
- Length :
- 7.74mm
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- 2N6034
- Package / Case :
- TO-225AA, TO-126-3
- Number of Elements :
- 1
- Transistor Type :
- PNP - Darlington
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 40V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -40V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1.5W
- Number of Pins :
- 3
- Factory Lead Time :
- 2 Weeks
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 40W
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 4.535924g
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -65°C~150°C TJ
- Max Collector Current :
- 4A
- Width :
- 2.66mm
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 40V
- Pbfree Code :
- yes
- Halogen Free :
- Halogen Free
- Mounting Type :
- Through Hole
- Datasheets
- 2N6034
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PNP - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6034G Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 25MHz.A maximum collector current of 4A volts is possible.
2N6034G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6034G Applications
There are a lot of ON Semiconductor
2N6034G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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