2N5967

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Mfr.Part #
2N5967
Manufacturer
Microchip Technology
Package / Case
TO-211MB, TO-63-4, Stud
Datasheet
Download
Description
POWER BJT
Stock
37,421
In Stock :
37,421

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Power - Max :
220 W
Number of Elements :
1
Pbfree Code :
No
Technology :
Si
JESD-30 Code :
O-MUPM-D3
Operating Temperature :
-65°C ~ 200°C (TJ)
Qualification Status :
Not Qualified
DC Current Gain-Min (hFE) :
30
Current - Collector (Ic) (Max) :
40 A
Product Type :
BJTs - Bipolar Transistors
Vce Saturation (Max) @ Ib, Ic :
-
Transistor Polarity :
PNP
Terminal Form :
Solder Lug
Package Shape :
Round
Configuration :
Single
Subcategory :
Transistors
Collector Current-Max (IC) :
30 A
Package :
Bulk
Reach Compliance Code :
Unknown
Brand :
Microchip Technology
Manufacturer :
Microchip
Current - Collector Cutoff (Max) :
-
Power Dissipation-Max (Abs) :
125 W
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Case Connection :
COLLECTOR
Product Category :
Bipolar Transistors - BJT
Terminal Position :
UPPER
Polarity/Channel Type :
PNP
Mounting Type :
Stud Mount
Series :
-
Frequency - Transition :
-
Power Dissipation Ambient-Max :
125 W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminals :
3
Surface Mount :
No
Package / Case :
TO-211MB, TO-63-4, Stud
Product Status :
Active
Collector-Emitter Voltage-Max :
100 V
VCEsat-Max :
1.2 V
Voltage - Collector Emitter Breakdown (Max) :
100 V
Supplier Device Package :
TO-63
Transistor Type :
PNP
JEDEC-95 Code :
TO-63
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Datasheets
2N5967
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5967 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C ~ 200°C (TJ), Mounting Type:Stud Mount, Package / Case:TO-211MB, TO-63-4, Stud, 2N5967 pinout, 2N5967 datasheet PDF, 2N5967 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5967 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON PNP TO-211MB, TO-63-4, Stud Stud Mount

2N5967 Overview


In this device, the DC current gain is -, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is -.Supplier device package TO-63 comes with the product.Voltage of maximal collector-emitter is set to 100 V.The device exhibits a collector-emitter breakdown at 100 V.

2N5967 Features


the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-63


2N5967 Applications


There are a lot of Microchip Technology
2N5967 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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