2N5962 PBFREE
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- Mfr.Part #
- 2N5962 PBFREE
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.05A TO92
- Stock
- 28,820
- In Stock ：
- 28,820
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 600 @ 10mA 5V
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 2nA ICBO
- Factory Lead Time :
- 8 Weeks
- Terminal Finish :
- MATTE TIN OVER NICKEL
- Power - Max :
- 1.5W
- Operating Temperature :
- -65°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 500μA, 10mA
- Current - Collector (Ic) (Max) :
- 50mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Bulk
- Frequency - Transition :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- 2N5962 PBFREE
NPN -65°C~150°C TJ 2nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N5962 PBFREE Overview
In this device, the DC current gain is 600 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 500μA, 10mA.The device exhibits a collector-emitter breakdown at 45V.
2N5962 PBFREE Features
the DC current gain for this device is 600 @ 10mA 5V
the vce saturation(Max) is 200mV @ 500μA, 10mA
2N5962 PBFREE Applications
There are a lot of Central Semiconductor Corp
2N5962 PBFREE applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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