2N5876
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- Mfr.Part #
- 2N5876
- Manufacturer
- Microchip Technology
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- PNP POWER TRANSISTOR SILICON AMP
- Stock
- 47,910
- In Stock ：
- 47,910
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 80V
- ECCN Code :
- EAR99
- JESD-30 Code :
- O-MBFM-P2
- Number of Terminations :
- 2
- Power Dissipation :
- 150W
- Max Power Dissipation :
- 150W
- Polarity :
- PNP
- JESD-609 Code :
- e0
- DC Current Gain-Min (hFE) :
- 20
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Contact Plating :
- Lead, Tin
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Terminal Finish :
- TIN LEAD
- Published :
- 2007
- Number of Elements :
- 1
- Max Collector Current :
- 10A
- Terminal Form :
- PIN/PEG
- Factory Lead Time :
- 12 Weeks
- Pbfree Code :
- No
- Datasheets
- 2N5876
1 Elements 2 Terminations SILICON TO-3
2N5876 Overview
Collector current can be as low as 10A volts at its maximum.
2N5876 Features
2N5876 Applications
There are a lot of Microsemi Corporation
2N5876 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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