2N5796

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Radiation Hardening :

No

Package / Case :

6-CLCC

Current - Collector Cutoff (Max) :

10nA ICBO

Collector Base Voltage (VCBO) :

60V

Length :

6.35mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Power Dissipation :

600mW

Width :

4.445mm

Published :

1997

Min Operating Temperature :

-65°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector (Ic) (Max) :

600mA

RoHS Status :

Non-RoHS Compliant

Mount :

Surface Mount

Supplier Device Package :

6-CLCC

Height :

2.032mm

Collector Emitter Breakdown Voltage :

60V

Element Configuration :

Dual

hFE Min :

75

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 50mA, 500mA

Factory Lead Time :

15 Weeks

Max Power Dissipation :

600mW

Max Operating Temperature :

200°C

Mounting Type :

Surface Mount

Power - Max :

600mW

Collector Emitter Saturation Voltage :

1.6V

Number of Elements :

2

Transistor Type :

2 PNP (Dual)

Operating Temperature :

-65°C~200°C TJ

Max Collector Current :

600mA

Packaging :

Bulk

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

60V

Number of Pins :

6

Polarity :

PNP

Voltage - Collector Emitter Breakdown (Max) :

60V