2N5771_D75Z
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- Mfr.Part #
- 2N5771_D75Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 15V 0.2A TO92-3
- Stock
- 36,236
- In Stock ：
- 36,236
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 350mW
- Current - Collector Cutoff (Max) :
- 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 300mV
- Packaging :
- Tape and Box (TB)
- Current - Collector (Ic) (Max) :
- 200mA
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max) :
- 15V
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Base Part Number :
- 2N5771
- Datasheets
- 2N5771_D75Z
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 10nA TO-226-3, TO-92-3 (TO-226AA) Tape & Box (TB) Through Hole
2N5771_D75Z Overview
This device has a DC current gain of 50 @ 10mA 300mV, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 15V maximal voltage is present.
2N5771_D75Z Features
the DC current gain for this device is 50 @ 10mA 300mV
the vce saturation(Max) is 600mV @ 5mA, 50mA
2N5771_D75Z Applications
There are a lot of ON Semiconductor
2N5771_D75Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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