2N5584
- Mfr.Part #
- 2N5584
- Manufacturer
- Microchip Technology
- Package / Case
- TO-211MB, TO-63-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 8,961
- In Stock :
- 8,961
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2mA, 10mA
- Collector Current-Max (IC) :
- 30 A
- ECCN Code :
- EAR99
- Power - Max :
- 175 W
- Transistor Polarity :
- NPN
- Collector-Emitter Voltage-Max :
- 180 V
- Supplier Device Package :
- TO-63
- Current - Collector (Ic) (Max) :
- 30 A
- Case Connection :
- COLLECTOR
- Number of Terminals :
- 3
- Package / Case :
- TO-211MB, TO-63-4, Stud
- DC Current Gain-Min (hFE) :
- 40
- Manufacturer :
- Solitron Devices Inc
- Polarity/Channel Type :
- NPN
- Reach Compliance Code :
- Unknown
- Pbfree Code :
- No
- Terminal Position :
- UPPER
- Technology :
- Si
- Product Status :
- Active
- Transistor Element Material :
- SILICON
- Mounting Type :
- Stud Mount
- Package Shape :
- Round
- Surface Mount :
- No
- Current - Collector Cutoff (Max) :
- -
- Configuration :
- Single
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Frequency - Transition :
- -
- Power Dissipation Ambient-Max :
- 100 W
- JEDEC-95 Code :
- TO-63
- Transistor Type :
- NPN
- Terminal Form :
- Solder Lug
- Transistor Application :
- SWITCHING
- Series :
- -
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- O-MUPM-D3
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Power Dissipation-Max (Abs) :
- 100 W
- Voltage - Collector Emitter Breakdown (Max) :
- 180 V
- Subcategory :
- Other Transistors
- Package :
- Bulk
- VCEsat-Max :
- 0.5 V
- Datasheets
- 2N5584
NPN -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-211MB, TO-63-4, Stud Stud Mount
2N5584 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has - DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.180 V is the maximum collector-emitter voltage setting.Single BJT transistor shows a 180 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N5584 Features
the DC current gain for this device is -
the vce saturation(Max) is 1.5V @ 2mA, 10mA
the supplier device package of TO-63
2N5584 Applications
There are a lot of Microchip Technology
2N5584 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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